A research group from Tohoku University led by current president Hideo Ohno has developed the world's smallest (2.3 nm) high-performance magnetic tunnel junctions (MTJs). This work is expected to accelerate the advancement of ultrahigh-density, low-power, high-performance non-volatile memory for a variety of applications, such as IoT, AI, and automobiles.
The development of STT-MRAM - non-volatile spintronics memory - helps reduce the increasing power consumption in semiconductor device scaling. Crucial to integrating STT-MRAM in advanced integrated circuits is scaling magnetic tunnel junction - a core component of STT-MRAM - while improving its performance in data retention and write operation